Report Title: Development of nanoManufacturing process based on plasma and electrochemistry for difficult-to-machine materials.
Prof. Kazuya Yamamura, Osaka University
Wide gap semiconductor materials, such as SiC, GaN and diamond, are very promising materials for power device because of their excellent electronic and thermal properties. However, owing to the high hardness and chemical inertness of those materials, polishing rate of these materials is low and subsurface damage is formed in conventional polishing process. To resolve these issues, we proposed nanomanufacturing process based on plasma and electrochemistry. In this seminar, I introduce plasma-assisted polishing (PAP), which combines atmospheric-pressure plasma irradiation and soft abrasive polishing and slurryless electrochemical mechanical polishing (ECMP), which combines anodic oxidation and fixed abrasive polishing to realize highly-efficient and high-integrity finishing of difficult-to-polish materials.
Prof. Yamamura started his carrier as a Research Associate at Department of Precision Engineering of Osaka University. He obtained the Degree of Dr.-Eng from Osaka University in 2001. His research area is development of unconventional ultraprecision fabrication process and its application. He developed several unique ultra-precision figuring and finishing techniques, which utilize atmospheric pressure plasma. Plasma chemical vaporization machining: PCVM is a noncontact chemical figuring technique for fabrication of ultraprecision optical components and the substrate for electronic device use. Plasma-assisted polishing: PAP is a damage-free finishing technique for wide gap semiconductor materials, such as SiC, GaN, diamond, and sapphire. Some of his research works have been presented at General Assemblies of CIRP.